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Effect of ion implantation energy for the synthesis of Ge n..:
Sahu, Bhabani Shankar
;
Gloux, Florence
;
Slaoui, Abdelilah
...
Nanoscale Research Letters. 6 (2011) 1 - p. , 2011
Link:
https://doi.org/10.1186/1556-276x-6-177
RT Journal T1
Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application
UL https://suche.suub.uni-bremen.de/peid=cr-10.1186_1556-276x-6-177&Exemplar=1&LAN=DE A1 Sahu, Bhabani Shankar A1 Gloux, Florence A1 Slaoui, Abdelilah A1 Carrada, Marzia A1 Muller, Dominique A1 Groenen, Jesse A1 Bonafos, Caroline A1 Lhostis, Sandrine PB Springer Science and Business Media LLC YR 2011 SN 1556-276X JF Nanoscale Research Letters VO 6 IS 1 LK http://dx.doi.org/https://doi.org/10.1186/1556-276x-6-177 DO https://doi.org/10.1186/1556-276x-6-177 SF ELIB - SuUB Bremen
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