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1 Ergebnisse
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pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 ..:
Wang, Guilei
;
Luo, Jun
;
Liu, Jinbiao
...
Nanoscale Research Letters. 12 (2017) 1 - p. , 2017
Link:
https://doi.org/10.1186/s11671-017-2080-2
RT Journal T1
pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology
UL https://suche.suub.uni-bremen.de/peid=cr-10.1186_s11671-017-2080-2&Exemplar=1&LAN=DE A1 Wang, Guilei A1 Luo, Jun A1 Liu, Jinbiao A1 Yang, Tao A1 Xu, Yefeng A1 Li, Junfeng A1 Yin, Huaxiang A1 Yan, Jiang A1 Zhu, Huilong A1 Zhao, Chao A1 Ye, Tianchun A1 Radamson, Henry H. PB Springer Science and Business Media LLC YR 2017 SN 1931-7573 SN 1556-276X JF Nanoscale Research Letters VO 12 IS 1 LK http://dx.doi.org/https://doi.org/10.1186/s11671-017-2080-2 DO https://doi.org/10.1186/s11671-017-2080-2 SF ELIB - SuUB Bremen
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