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1
INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYP..:
, In:
EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR
,
Grötzschel, R.
;
Kagadey, V. A.
;
Knothe, P.
... - p. 237-239 , 1989
Link:
https://doi.org/10.1515/9783112575666-050
RT T1 <cTitle>EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR</cTitle>: T1 <Title>INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1515_9783112575666-050&Exemplar=1&LAN=DE A1 Grötzschel, R. A1 Kagadey, V. A. A1 Knothe, P. A1 Lebedeva, N. I. A1 Ozur, G. E. A1 Proakurovaky, D. I. PB De Gruyter YR 1989 SP 237 OP 239 LK http://dx.doi.org/https://doi.org/10.1515/9783112575666-050 DO https://doi.org/10.1515/9783112575666-050 SF ELIB - SuUB Bremen
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