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The effect of carbon impurities on lightly doped MOCVD GaN ..:
Tompkins, Randy P.
;
Walsh, Timothy A.
;
Derenge, Michael A.
...
Journal of Materials Research. 26 (2011) 23 - p. 2895-2900 , 2011
Link:
https://doi.org/10.1557/jmr.2011.360
RT Journal T1
The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes
UL https://suche.suub.uni-bremen.de/peid=cr-10.1557_jmr.2011.360&Exemplar=1&LAN=DE A1 Tompkins, Randy P. A1 Walsh, Timothy A. A1 Derenge, Michael A. A1 Kirchner, Kevin W. A1 Zhou, Shuai A1 Nguyen, Cuong B. A1 Jones, Kenneth A. A1 Suvarna, Puneet A1 Tungare, Mihir A1 Tripathi, Neeraj A1 Shahedipour-Sandvik, Fatemeh (Shadi) PB Springer Science and Business Media LLC YR 2011 SN 0884-2914 SN 2044-5326 JF Journal of Materials Research VO 26 IS 23 SP 2895 OP 2900 LK http://dx.doi.org/https://doi.org/10.1557/jmr.2011.360 DO https://doi.org/10.1557/jmr.2011.360 SF ELIB - SuUB Bremen
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