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1 Ergebnisse
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P‐4: SPC Poly‐Si TFT Having a Maximum Process Temperature o..:
Park, Seong Jin
;
Cho, Bong Rae
;
Kim, Kyung Ho
...
SID Symposium Digest of Technical Papers. 32 (2001) 1 - p. 562-565 , 2001
Link:
https://doi.org/10.1889/1.1831921
RT Journal T1 <Title>P‐4: SPC Poly‐Si TFT Having a Maximum Process Temperature of 380°C</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1889_1.1831921&Exemplar=1&LAN=DE A1 Park, Seong Jin A1 Cho, Bong Rae A1 Kim, Kyung Ho A1 Cho, Kyu Sik A1 Yoo, Seong Yeol A1 Kim, Ah Young A1 Jang, Jin A1 Shin, Dong Hyuk PB Wiley YR 2001 SN 0097-966X SN 2168-0159 JF SID Symposium Digest of Technical Papers VO 32 IS 1 SP 562 OP 565 LK http://dx.doi.org/https://doi.org/10.1889/1.1831921 DO https://doi.org/10.1889/1.1831921 SF ELIB - SuUB Bremen
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