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Memory effects of all‐solution‐processed oxide thin‐film tr..:
Bae, Jung Hyeon
;
Kim, Gun Hee
;
Jeong, Woong Hee
.
Journal of the Society for Information Display. 19 (2011) 5 - p. 404-409 , 2011
Link:
https://doi.org/10.1889/jsid19.5.404
RT Journal T1 <Title>Memory effects of all‐solution‐processed oxide thin‐film transistors using ZnO nanoparticles</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.1889_jsid19.5.404&Exemplar=1&LAN=DE A1 Bae, Jung Hyeon A1 Kim, Gun Hee A1 Jeong, Woong Hee A1 Kim, Hyun Jae PB Wiley YR 2011 SN 1071-0922 SN 1938-3657 JF Journal of the Society for Information Display VO 19 IS 5 SP 404 OP 409 LK http://dx.doi.org/https://doi.org/10.1889/jsid19.5.404 DO https://doi.org/10.1889/jsid19.5.404 SF ELIB - SuUB Bremen
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