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Bilayer Resists for 193 nm Lithography: SSQ and POSS:
Ito, Hiroshi
;
Truong, Hoa D.
;
Burns, Sean D.
..
Journal of Photopolymer Science and Technology. 19 (2006) 3 - p. 305-311 , 2006
Link:
https://doi.org/10.2494/photopolymer.19.305
RT Journal T1 <Title>Bilayer Resists for 193 nm Lithography: SSQ and POSS</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.2494_photopolymer.19.305&Exemplar=1&LAN=DE A1 Ito, Hiroshi A1 Truong, Hoa D. A1 Burns, Sean D. A1 Pfeiffer, Dirk A1 Medeiros, David R. PB Technical Association of Photopolymers, Japan YR 2006 SN 0914-9244 SN 1349-6336 JF Journal of Photopolymer Science and Technology VO 19 IS 3 SP 305 OP 311 LK http://dx.doi.org/https://doi.org/10.2494/photopolymer.19.305 DO https://doi.org/10.2494/photopolymer.19.305 SF ELIB - SuUB Bremen
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