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Contribution to the Physical Modelling of Single Charged De..:
Atamuratov, Atabek E.
;
Khalilloev, Mahkam M.
;
Yusupov, Ahmed
...
Applied Sciences. 10 (2020) 15 - p. 5327 , 2020
Link:
https://doi.org/10.3390/app10155327
RT Journal T1
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_app10155327&Exemplar=1&LAN=DE A1 Atamuratov, Atabek E. A1 Khalilloev, Mahkam M. A1 Yusupov, Ahmed A1 García-Loureiro, A. J. A1 Chedjou, Jean Chamberlain A1 Kyandoghere, Kyamakya PB MDPI AG YR 2020 SN 2076-3417 JF Applied Sciences VO 10 IS 15 SP 5327 LK http://dx.doi.org/https://doi.org/10.3390/app10155327 DO https://doi.org/10.3390/app10155327 SF ELIB - SuUB Bremen
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