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1 Ergebnisse
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Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined ..:
Guo, Ning
;
Pei, Yicheng
;
Yuan, Weilong
...
Crystals. 13 (2023) 7 - p. 1123 , 2023
Link:
https://doi.org/10.3390/cryst13071123
RT Journal T1
Layered Epitaxial Growth of 3C/4H Silicon Carbide Confined by Surface Micro-Nano Steps
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_cryst13071123&Exemplar=1&LAN=DE A1 Guo, Ning A1 Pei, Yicheng A1 Yuan, Weilong A1 Li, Yunkai A1 Zhao, Siqi A1 Yang, Shangyu A1 Zhang, Yang A1 Liu, Xingfang PB MDPI AG YR 2023 SN 2073-4352 JF Crystals VO 13 IS 7 SP 1123 LK http://dx.doi.org/https://doi.org/10.3390/cryst13071123 DO https://doi.org/10.3390/cryst13071123 SF ELIB - SuUB Bremen
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