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1 Ergebnisse
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The Characteristics of 6-Inch GaN on Si RF HEMT with High I..:
Huang, Chong-Rong
;
Liu, Chia-Hao
;
Wang, Hsiang-Chun
...
Electronics. 10 (2020) 1 - p. 46 , 2020
Link:
https://doi.org/10.3390/electronics10010046
RT Journal T1
The Characteristics of 6-Inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_electronics10010046&Exemplar=1&LAN=DE A1 Huang, Chong-Rong A1 Liu, Chia-Hao A1 Wang, Hsiang-Chun A1 Kao, Hsuan-Ling A1 Chiu, Hsien-Chin A1 Chen, Chih-Tien A1 Chang, Kuo-Jen PB MDPI AG YR 2020 SN 2079-9292 JF Electronics VO 10 IS 1 SP 46 LK http://dx.doi.org/https://doi.org/10.3390/electronics10010046 DO https://doi.org/10.3390/electronics10010046 SF ELIB - SuUB Bremen
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