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1 Ergebnisse
1
Engineering Improvement of the Core Layers of Charge Trappi..:
Wang, Kexiang
;
Lu, Jie
;
Xiang, Zeyang
...
Electronics. 13 (2024) 9 - p. 1642 , 2024
Link:
https://doi.org/10.3390/electronics13091642
RT Journal T1
Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_electronics13091642&Exemplar=1&LAN=DE A1 Wang, Kexiang A1 Lu, Jie A1 Xiang, Zeyang A1 Wang, Zixuan A1 Jin, Huilin A1 Li, Ranping A1 Jiang, Ran PB MDPI AG YR 2024 SN 2079-9292 JF Electronics VO 13 IS 9 SP 1642 LK http://dx.doi.org/https://doi.org/10.3390/electronics13091642 DO https://doi.org/10.3390/electronics13091642 SF ELIB - SuUB Bremen
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