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1 Ergebnisse
1
Aluminum Nitride Transition Layer for Power Electronics App..:
Seppänen, Heli
;
Kim, Iurii
;
Etula, Jarkko
...
Materials. 12 (2019) 3 - p. 406 , 2019
Link:
https://doi.org/10.3390/ma12030406
RT Journal T1
Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_ma12030406&Exemplar=1&LAN=DE A1 Seppänen, Heli A1 Kim, Iurii A1 Etula, Jarkko A1 Ubyivovk, Evgeniy A1 Bouravleuv, Alexei A1 Lipsanen, Harri PB MDPI AG YR 2019 SN 1996-1944 JF Materials VO 12 IS 3 SP 406 LK http://dx.doi.org/https://doi.org/10.3390/ma12030406 DO https://doi.org/10.3390/ma12030406 SF ELIB - SuUB Bremen
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