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1 Ergebnisse
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Analysis for DC and RF Characteristics Recessed-Gate GaN MO..:
Min, So-Ra
;
Cho, Min-Su
;
Lee, Sang-Ho
...
Materials. 15 (2022) 3 - p. 819 , 2022
Link:
https://doi.org/10.3390/ma15030819
RT Journal T1
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_ma15030819&Exemplar=1&LAN=DE A1 Min, So-Ra A1 Cho, Min-Su A1 Lee, Sang-Ho A1 Park, Jin A1 An, Hee-Dae A1 Kim, Geon-Uk A1 Yoon, Young-Jun A1 Seo, Jae-Hwa A1 Jang, Jae-Won A1 Bae, Jin-Hyuk A1 Lee, Sin-Hyung A1 Kang, In-Man PB MDPI AG YR 2022 SN 1996-1944 JF Materials VO 15 IS 3 SP 819 LK http://dx.doi.org/https://doi.org/10.3390/ma15030819 DO https://doi.org/10.3390/ma15030819 SF ELIB - SuUB Bremen
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