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1 Ergebnisse
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Development of Quaternary InAlGaN Barrier Layer for High El..:
Jorudas, Justinas
;
Prystawko, Paweł
;
Šimukovič, Artūr
...
Materials. 15 (2022) 3 - p. 1118 , 2022
Link:
https://doi.org/10.3390/ma15031118
RT Journal T1
Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_ma15031118&Exemplar=1&LAN=DE A1 Jorudas, Justinas A1 Prystawko, Paweł A1 Šimukovič, Artūr A1 Aleksiejūnas, Ramūnas A1 Mickevičius, Jūras A1 Kryśko, Marcin A1 Michałowski, Paweł Piotr A1 Kašalynas, Irmantas PB MDPI AG YR 2022 SN 1996-1944 JF Materials VO 15 IS 3 SP 1118 LK http://dx.doi.org/https://doi.org/10.3390/ma15031118 DO https://doi.org/10.3390/ma15031118 SF ELIB - SuUB Bremen
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