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1 Ergebnisse
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Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insul..:
Schilirò, Emanuela
;
Fiorenza, Patrick
;
Lo Nigro, Raffaella
...
Materials. 16 (2023) 16 - p. 5638 , 2023
Link:
https://doi.org/10.3390/ma16165638
RT Journal T1
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_ma16165638&Exemplar=1&LAN=DE A1 Schilirò, Emanuela A1 Fiorenza, Patrick A1 Lo Nigro, Raffaella A1 Galizia, Bruno A1 Greco, Giuseppe A1 Di Franco, Salvatore A1 Bongiorno, Corrado A1 La Via, Francesco A1 Giannazzo, Filippo A1 Roccaforte, Fabrizio PB MDPI AG YR 2023 SN 1996-1944 JF Materials VO 16 IS 16 SP 5638 LK http://dx.doi.org/https://doi.org/10.3390/ma16165638 DO https://doi.org/10.3390/ma16165638 SF ELIB - SuUB Bremen
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