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1 Ergebnisse
1
Characteristics of Activation Rate and Damage of Ion-Implan..:
Wu, Jingmin
;
Yang, Xiang
;
Wang, Fengxuan
...
Micromachines. 13 (2022) 5 - p. 804 , 2022
Link:
https://doi.org/10.3390/mi13050804
RT Journal T1
Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_mi13050804&Exemplar=1&LAN=DE A1 Wu, Jingmin A1 Yang, Xiang A1 Wang, Fengxuan A1 Guo, Zhiyu A1 Fan, Zhongchao A1 He, Zhi A1 Yang, Fuhua PB MDPI AG YR 2022 SN 2072-666X JF Micromachines VO 13 IS 5 SP 804 LK http://dx.doi.org/https://doi.org/10.3390/mi13050804 DO https://doi.org/10.3390/mi13050804 SF ELIB - SuUB Bremen
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