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1 Ergebnisse
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Effect of P-Type GaN Buried Layer on the Temperature of AlG..:
Lv, Hanghang
;
Cao, Yanrong
;
Ma, Maodan
...
Micromachines. 14 (2023) 7 - p. 1457 , 2023
Link:
https://doi.org/10.3390/mi14071457
RT Journal T1
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_mi14071457&Exemplar=1&LAN=DE A1 Lv, Hanghang A1 Cao, Yanrong A1 Ma, Maodan A1 Wang, Zhiheng A1 Zhang, Xinxiang A1 Chen, Chuan A1 Wu, Linshan A1 Lv, Ling A1 Zheng, Xuefeng A1 Wang, Yongkun A1 Tian, Wenchao A1 Ma, Xiaohua PB MDPI AG YR 2023 SN 2072-666X JF Micromachines VO 14 IS 7 SP 1457 LK http://dx.doi.org/https://doi.org/10.3390/mi14071457 DO https://doi.org/10.3390/mi14071457 SF ELIB - SuUB Bremen
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