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1 Ergebnisse
1
Charging Effect by Fluorine-Treatment and Recess Gate for E..:
Kang, Soo Cheol
;
Jung, Hyun-Wook
;
Chang, Sung-Jae
...
Nanomaterials. 10 (2020) 11 - p. 2116 , 2020
Link:
https://doi.org/10.3390/nano10112116
RT Journal T1
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_nano10112116&Exemplar=1&LAN=DE A1 Kang, Soo Cheol A1 Jung, Hyun-Wook A1 Chang, Sung-Jae A1 Kim, Seung Mo A1 Lee, Sang Kyung A1 Lee, Byoung Hun A1 Kim, Haecheon A1 Noh, Youn-Sub A1 Lee, Sang-Heung A1 Kim, Seong-Il A1 Ahn, Ho-Kyun A1 Lim, Jong-Won PB MDPI AG YR 2020 SN 2079-4991 JF Nanomaterials VO 10 IS 11 SP 2116 LK http://dx.doi.org/https://doi.org/10.3390/nano10112116 DO https://doi.org/10.3390/nano10112116 SF ELIB - SuUB Bremen
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