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High-Temperature Atomic Layer Deposition of GaN on 1D Nanos..:
Austin, Aaron J.
;
Echeverria, Elena
;
Wagle, Phadindra
...
Nanomaterials. 10 (2020) 12 - p. 2434 , 2020
Link:
https://doi.org/10.3390/nano10122434
RT Journal T1
High-Temperature Atomic Layer Deposition of GaN on 1D Nanostructures
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_nano10122434&Exemplar=1&LAN=DE A1 Austin, Aaron J. A1 Echeverria, Elena A1 Wagle, Phadindra A1 Mainali, Punya A1 Meyers, Derek A1 Gupta, Ashish Kumar A1 Sachan, Ritesh A1 Prassana, S. A1 McIlroy, David N. PB MDPI AG YR 2020 SN 2079-4991 JF Nanomaterials VO 10 IS 12 SP 2434 LK http://dx.doi.org/https://doi.org/10.3390/nano10122434 DO https://doi.org/10.3390/nano10122434 SF ELIB - SuUB Bremen
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