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1 Ergebnisse
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Design of a Capacitorless DRAM Based on a Polycrystalline-S..:
An, Hee Dae
;
Lee, Sang Ho
;
Park, Jin
...
Nanomaterials. 12 (2022) 19 - p. 3526 , 2022
Link:
https://doi.org/10.3390/nano12193526
RT Journal T1
Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_nano12193526&Exemplar=1&LAN=DE A1 An, Hee Dae A1 Lee, Sang Ho A1 Park, Jin A1 Min, So Ra A1 Kim, Geon Uk A1 Yoon, Young Jun A1 Seo, Jae Hwa A1 Cho, Min Su A1 Jang, Jaewon A1 Bae, Jin-Hyuk A1 Lee, Sin-Hyung A1 Kang, In Man PB MDPI AG YR 2022 SN 2079-4991 JF Nanomaterials VO 12 IS 19 SP 3526 LK http://dx.doi.org/https://doi.org/10.3390/nano12193526 DO https://doi.org/10.3390/nano12193526 SF ELIB - SuUB Bremen
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