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1 Ergebnisse
1
Improved Vth Stability and Gate Reliability of GaN-Based MI..:
Xie, Xinling
;
Wang, Qiang
;
Pan, Maolin
...
Nanomaterials. 14 (2024) 6 - p. 523 , 2024
Link:
https://doi.org/10.3390/nano14060523
RT Journal T1
Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment
UL https://suche.suub.uni-bremen.de/peid=cr-10.3390_nano14060523&Exemplar=1&LAN=DE A1 Xie, Xinling A1 Wang, Qiang A1 Pan, Maolin A1 Zhang, Penghao A1 Wang, Luyu A1 Yang, Yannan A1 Huang, Hai A1 Hu, Xin A1 Xu, Min PB MDPI AG YR 2024 SN 2079-4991 JF Nanomaterials VO 14 IS 6 SP 523 LK http://dx.doi.org/https://doi.org/10.3390/nano14060523 DO https://doi.org/10.3390/nano14060523 SF ELIB - SuUB Bremen
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