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1 Ergebnisse
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A low power L-shaped gate bipolar impact ionization MOSFET ..:
Kumar Kamal, Alok
;
Kamal, Neha
;
Singh, Jawar
Japanese Journal of Applied Physics. 60 (2021) 6 - p. 064003 , 2021
Link:
https://doi.org/10.35848/1347-4065/ac016c
RT Journal T1
A low power L-shaped gate bipolar impact ionization MOSFET based capacitorless one transistor dynamic random access memory cell
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ac016c&Exemplar=1&LAN=DE A1 Kumar Kamal, Alok A1 Kamal, Neha A1 Singh, Jawar PB IOP Publishing YR 2021 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 60 IS 6 SP 064003 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ac016c DO https://doi.org/10.35848/1347-4065/ac016c SF ELIB - SuUB Bremen
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