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1 Ergebnisse
1
TiO2 insertion layer deposited before passivation to reduce..:
Qin, Yanbin
;
Wang, Quan
;
Chen, Changxi
...
Japanese Journal of Applied Physics. 61 (2022) 8 - p. 086503 , 2022
Link:
https://doi.org/10.35848/1347-4065/ac5811
RT Journal T1
TiO2 insertion layer deposited before passivation to reduce etch damage on AlGaN/GaN HEMT
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ac5811&Exemplar=1&LAN=DE A1 Qin, Yanbin A1 Wang, Quan A1 Chen, Changxi A1 Xu, Jiankai A1 Jiang, Lijuan A1 Feng, Chun A1 Xiao, Hongling A1 Xu, Xiangang A1 Wang, Xiaoliang PB IOP Publishing YR 2022 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 61 IS 8 SP 086503 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ac5811 DO https://doi.org/10.35848/1347-4065/ac5811 SF ELIB - SuUB Bremen
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