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1 Ergebnisse
1
Study of heavy ion induced single event gate rupture effect..:
Xiaowen, Liang
;
Haonan, Feng
;
Xiaojuan, Pu
...
Japanese Journal of Applied Physics. 61 (2022) 8 - p. 084002 , 2022
Link:
https://doi.org/10.35848/1347-4065/ac7dd4
RT Journal T1
Study of heavy ion induced single event gate rupture effect in SiC MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ac7dd4&Exemplar=1&LAN=DE A1 Xiaowen, Liang A1 Haonan, Feng A1 Xiaojuan, Pu A1 Jiangwei, Cui A1 Jing, Sun A1 Ying, Wei A1 Dan, Zhang A1 Xuefeng, Yu A1 Qi, Guo PB IOP Publishing YR 2022 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 61 IS 8 SP 084002 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ac7dd4 DO https://doi.org/10.35848/1347-4065/ac7dd4 SF ELIB - SuUB Bremen
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