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1 Ergebnisse
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The impacts of localized backside etching on proton radiati..:
Zhao, Biyao
;
Bi, Jinshun
;
Ma, Yue
...
Japanese Journal of Applied Physics. 62 (2023) 2 - p. 020905 , 2023
Link:
https://doi.org/10.35848/1347-4065/acb40f
RT Journal T1 <Title>The impacts of localized backside etching on proton radiation response in SOI passive devices</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_acb40f&Exemplar=1&LAN=DE A1 Zhao, Biyao A1 Bi, Jinshun A1 Ma, Yue A1 Zhang, Jian A1 Wang, Yan A1 Fan, Linjie A1 Han, Tingting A1 Xuan, Yundong A1 Stempitsky, Viktor A1 Liu, Mengxin PB IOP Publishing YR 2023 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 62 IS 2 SP 020905 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/acb40f DO https://doi.org/10.35848/1347-4065/acb40f SF ELIB - SuUB Bremen
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