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Spintronics memory using magnetic tunnel junction for X nm-..:
Naganuma, Hiroshi
Japanese Journal of Applied Physics. 62 (2023) SG - p. SG0811 , 2023
Link:
https://doi.org/10.35848/1347-4065/accaed
RT Journal T1 <Title>Spintronics memory using magnetic tunnel junction for X nm-generation</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_accaed&Exemplar=1&LAN=DE A1 Naganuma, Hiroshi PB IOP Publishing YR 2023 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 62 IS SG SP SG0811 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/accaed DO https://doi.org/10.35848/1347-4065/accaed SF ELIB - SuUB Bremen
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