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1 Ergebnisse
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1.2 kV SiC MOSFETs with tapered buffer oxide for the suppre..:
Yoon, Hyowon
;
Kim, Jinhun
;
Kim, Sangyeob
...
Japanese Journal of Applied Physics. 62 (2023) 11 - p. 114001 , 2023
Link:
https://doi.org/10.35848/1347-4065/acff2f
RT Journal T1
1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_acff2f&Exemplar=1&LAN=DE A1 Yoon, Hyowon A1 Kim, Jinhun A1 Kim, Sangyeob A1 Kim, Chaeyun A1 Park, Yeongeun A1 Kwon, Soontak A1 Song, Jaejin A1 Lee, Jeongyun A1 Ha, Min-Woo A1 Seok, Ogyun PB IOP Publishing YR 2023 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 62 IS 11 SP 114001 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/acff2f DO https://doi.org/10.35848/1347-4065/acff2f SF ELIB - SuUB Bremen
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