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1 Ergebnisse
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High aspect ratio SiO2/SiN (ON) stacked layer etching using..:
Abe, C.
;
Sasaki, T.
;
Kondo, Y.
...
Japanese Journal of Applied Physics. 63 (2024) 6 - p. 06SP10 , 2024
Link:
https://doi.org/10.35848/1347-4065/ad4f95
RT Journal T1 <Title>High aspect ratio SiO2/SiN (ON) stacked layer etching using C3HF5, C4H2F6, and C4H4F6</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ad4f95&Exemplar=1&LAN=DE A1 Abe, C. A1 Sasaki, T. A1 Kondo, Y. A1 Yoshinaga, S. A1 Kuboi, S. A1 Takahashi, Y. A1 Kato, K. A1 Shimizu, H. A1 Fukumizu, H. A1 Omura, M. PB IOP Publishing YR 2024 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 63 IS 6 SP 06SP10 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ad4f95 DO https://doi.org/10.35848/1347-4065/ad4f95 SF ELIB - SuUB Bremen
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