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1 Ergebnisse
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Enhancement-mode Ga2O3 FETs with an unintentionally doped (..:
Li, Botong
;
Chen, Tiwei
;
Zhang, Li
...
Japanese Journal of Applied Physics. 63 (2024) 7 - p. 070901 , 2024
Link:
https://doi.org/10.35848/1347-4065/ad5897
RT Journal T1
Enhancement-mode Ga2O3 FETs with an unintentionally doped (001) β-Ga2O3 channel layer grown by metal-organic chemical vapor deposition
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ad5897&Exemplar=1&LAN=DE A1 Li, Botong A1 Chen, Tiwei A1 Zhang, Li A1 Zhang, Xiaodong A1 Zeng, Chunhong A1 Hu, Yu A1 Huang, Zijing A1 Xu, Kun A1 Tang, Wenbo A1 Shi, Wenhua A1 Cai, Yong A1 Zen, Zhongming A1 Zhang, Baoshun PB IOP Publishing YR 2024 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 63 IS 7 SP 070901 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ad5897 DO https://doi.org/10.35848/1347-4065/ad5897 SF ELIB - SuUB Bremen
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