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1 Ergebnisse
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Thermal stability of TiN gate electrode for 4H-SiC MOSFETs ..:
Van Cuong, Vuong
;
Meguro, Tatsuya
;
Ishikawa, Seiji
...
Japanese Journal of Applied Physics. 63 (2024) 8 - p. 086503 , 2024
Link:
https://doi.org/10.35848/1347-4065/ad665b
RT Journal T1
Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1347-4065_ad665b&Exemplar=1&LAN=DE A1 Van Cuong, Vuong A1 Meguro, Tatsuya A1 Ishikawa, Seiji A1 Maeda, Tomonori A1 Sezaki, Hiroshi A1 Kuroki, Shin-Ichiro PB IOP Publishing YR 2024 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 63 IS 8 SP 086503 LK http://dx.doi.org/https://doi.org/10.35848/1347-4065/ad665b DO https://doi.org/10.35848/1347-4065/ad665b SF ELIB - SuUB Bremen
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