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1 Ergebnisse
1
The incorporation of AlScN ferroelectric gate dielectric in..:
Zhao, Zihui
;
Dai, Yijun
;
Meng, Fanping
...
Applied Physics Express. , 2023
Link:
https://doi.org/10.35848/1882-0786/acbe26
RT Journal T1
The incorporation of AlScN ferroelectric gate dielectric in AlGaN/GaN HEMT with polarization modulated threshold voltage
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1882-0786_acbe26&Exemplar=1&LAN=DE A1 Zhao, Zihui A1 Dai, Yijun A1 Meng, Fanping A1 Chen, Li A1 Liu, Kunzi A1 Luo, Tian A1 Yu, Zhehan A1 Wang, Qikun A1 Yang, Zhenhai A1 Zhang, Jijun A1 Guo, Wei A1 Wu, Liang A1 Ye, Jichun PB IOP Publishing YR 2023 SN 1882-0778 SN 1882-0786 JF Applied Physics Express LK http://dx.doi.org/https://doi.org/10.35848/1882-0786/acbe26 DO https://doi.org/10.35848/1882-0786/acbe26 SF ELIB - SuUB Bremen
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