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1 Ergebnisse
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Modelling of impedance dispersion in lateral β-Ga2O3 MOSFET..:
Chen, Zequan
;
Mishra, Abhishek
;
Bhat, Aditya K.
...
Applied Physics Express. 16 (2023) 4 - p. 044002 , 2023
Link:
https://doi.org/10.35848/1882-0786/accc09
RT Journal T1
Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1882-0786_accc09&Exemplar=1&LAN=DE A1 Chen, Zequan A1 Mishra, Abhishek A1 Bhat, Aditya K. A1 Smith, Matthew D. A1 Uren, Michael J. A1 Kumar, Sandeep A1 Higashiwaki, Masataka A1 Kuball, Martin PB IOP Publishing YR 2023 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 16 IS 4 SP 044002 LK http://dx.doi.org/https://doi.org/10.35848/1882-0786/accc09 DO https://doi.org/10.35848/1882-0786/accc09 SF ELIB - SuUB Bremen
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