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1 Ergebnisse
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Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFET..:
Ikeyama, Kazuki
;
Tomita, Hidemoto
;
Harada, Sayaka
...
Applied Physics Express. 17 (2024) 6 - p. 064002 , 2024
Link:
https://doi.org/10.35848/1882-0786/ad4d3d
RT Journal T1
Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
UL https://suche.suub.uni-bremen.de/peid=cr-10.35848_1882-0786_ad4d3d&Exemplar=1&LAN=DE A1 Ikeyama, Kazuki A1 Tomita, Hidemoto A1 Harada, Sayaka A1 Okawa, Takashi A1 Liu, Li A1 Kawaharamura, Toshiyuki A1 Miyake, Hiroki A1 Nagasato, Yoshitaka PB IOP Publishing YR 2024 SN 1882-0778 SN 1882-0786 JF Applied Physics Express VO 17 IS 6 SP 064002 LK http://dx.doi.org/https://doi.org/10.35848/1882-0786/ad4d3d DO https://doi.org/10.35848/1882-0786/ad4d3d SF ELIB - SuUB Bremen
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