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Effect of substitutional defects on resonant tunneling diod..:
Sanaeepur, Majid
Beilstein Journal of Nanotechnology. 11 (2020) - p. 688-694 , 2020
Link:
https://doi.org/10.3762/bjnano.11.56
RT Journal T1 <Title>Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.3762_bjnano.11.56&Exemplar=1&LAN=DE A1 Sanaeepur, Majid PB Beilstein Institut YR 2020 SN 2190-4286 JF Beilstein Journal of Nanotechnology VO 11 SP 688 OP 694 LK http://dx.doi.org/https://doi.org/10.3762/bjnano.11.56 DO https://doi.org/10.3762/bjnano.11.56 SF ELIB - SuUB Bremen
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