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1 Ergebnisse
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Precise in situ etch depth control of multilayered III−V se..:
Kleinschmidt, Ann-Kathrin
;
Barzen, Lars
;
Strassner, Johannes
...
Beilstein Journal of Nanotechnology. 7 (2016) - p. 1783-1793 , 2016
Link:
https://doi.org/10.3762/bjnano.7.171
RT Journal T1
Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment
UL https://suche.suub.uni-bremen.de/peid=cr-10.3762_bjnano.7.171&Exemplar=1&LAN=DE A1 Kleinschmidt, Ann-Kathrin A1 Barzen, Lars A1 Strassner, Johannes A1 Doering, Christoph A1 Fouckhardt, Henning A1 Bock, Wolfgang A1 Wahl, Michael A1 Kopnarski, Michael PB Beilstein Institut YR 2016 SN 2190-4286 JF Beilstein Journal of Nanotechnology VO 7 SP 1783 OP 1793 LK http://dx.doi.org/https://doi.org/10.3762/bjnano.7.171 DO https://doi.org/10.3762/bjnano.7.171 SF ELIB - SuUB Bremen
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