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1 Ergebnisse
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Influence of the STI sidewall angle on the induced channel ..:
Wang, Xiang Zhan
;
Qin, Gui Xia
;
Luo, Qian
Journal of the Korean Physical Society. 60 (2012) 10 - p. 1639-1643 , 2012
Link:
https://doi.org/10.3938/jkps.60.1639
RT Journal T1 <Title>Influence of the STI sidewall angle on the induced channel stress in nanoscaled PMOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.3938_jkps.60.1639&Exemplar=1&LAN=DE A1 Wang, Xiang Zhan A1 Qin, Gui Xia A1 Luo, Qian PB Korean Physical Society YR 2012 SN 0374-4884 SN 1976-8524 JF Journal of the Korean Physical Society VO 60 IS 10 SP 1639 OP 1643 LK http://dx.doi.org/https://doi.org/10.3938/jkps.60.1639 DO https://doi.org/10.3938/jkps.60.1639 SF ELIB - SuUB Bremen
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