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Degradation characteristics of high-voltage AlGaN/GaN-on-Si..:
Choi, Shinhyuk
;
Lee, Jae-Gil
;
Cha, Ho-Young
.
Journal of the Korean Physical Society. 63 (2013) 6 - p. 1208-1212 , 2013
Link:
https://doi.org/10.3938/jkps.63.1208
RT Journal T1 <Title>Degradation characteristics of high-voltage AlGaN/GaN-on-Si heterostructure FETs under a reverse gate bias stress</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.3938_jkps.63.1208&Exemplar=1&LAN=DE A1 Choi, Shinhyuk A1 Lee, Jae-Gil A1 Cha, Ho-Young A1 Kim, Hyungtak PB Korean Physical Society YR 2013 SN 0374-4884 SN 1976-8524 JF Journal of the Korean Physical Society VO 63 IS 6 SP 1208 OP 1212 LK http://dx.doi.org/https://doi.org/10.3938/jkps.63.1208 DO https://doi.org/10.3938/jkps.63.1208 SF ELIB - SuUB Bremen
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