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Ion activation in boron-doped polycrystalline Si thin films..:
So, Byoung-Soo
;
Park, Chan-Rok
;
Bae, Seung-Muk
..
Journal of the Korean Physical Society. 63 (2013) 7 - p. 1362-1367 , 2013
Link:
https://doi.org/10.3938/jkps.63.1362
RT Journal T1 <Title>Ion activation in boron-doped polycrystalline Si thin films prepared on glass substrates</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.3938_jkps.63.1362&Exemplar=1&LAN=DE A1 So, Byoung-Soo A1 Park, Chan-Rok A1 Bae, Seung-Muk A1 Kim, Young-Hwan A1 Hwang, Jinha PB Korean Physical Society YR 2013 SN 0374-4884 SN 1976-8524 JF Journal of the Korean Physical Society VO 63 IS 7 SP 1362 OP 1367 LK http://dx.doi.org/https://doi.org/10.3938/jkps.63.1362 DO https://doi.org/10.3938/jkps.63.1362 SF ELIB - SuUB Bremen
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