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Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical ..:
Park, Tae Ho
;
Yang, Jeong Yong
;
Ma, Jiyeon
.
Journal of the Korean Physical Society. 77 (2020) 4 - p. 317-322 , 2020
Link:
https://doi.org/10.3938/jkps.77.317
RT Journal T1 <Title>Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.3938_jkps.77.317&Exemplar=1&LAN=DE A1 Park, Tae Ho A1 Yang, Jeong Yong A1 Ma, Jiyeon A1 Yoo, Geonwook PB Korean Physical Society YR 2020 SN 0374-4884 SN 1976-8524 JF Journal of the Korean Physical Society VO 77 IS 4 SP 317 OP 322 LK http://dx.doi.org/https://doi.org/10.3938/jkps.77.317 DO https://doi.org/10.3938/jkps.77.317 SF ELIB - SuUB Bremen
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