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1 Ergebnisse
1
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE..:
Lesecq, Marie
;
Frayssinet, Eric
;
Portail, Marc
...
Materials Science Forum. 1062 (2022) - p. 482-486 , 2022
Link:
https://doi.org/10.4028/p-2wi7o8
RT Journal T1
AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_p-2wi7o8&Exemplar=1&LAN=DE A1 Lesecq, Marie A1 Frayssinet, Eric A1 Portail, Marc A1 Bah, Micka A1 Defrance, Nicolas A1 Ngo, Thi Huong A1 Abou Daher, Mahmoud A1 Zielinski, Marcin A1 Alquier, Daniel A1 De Jaeger, Jean-Claude A1 Cordier, Yvon PB Trans Tech Publications, Ltd. YR 2022 SN 1662-9752 JF Materials Science Forum VO 1062 SP 482 OP 486 LK http://dx.doi.org/https://doi.org/10.4028/p-2wi7o8 DO https://doi.org/10.4028/p-2wi7o8 SF ELIB - SuUB Bremen
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