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1 Ergebnisse
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Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs..:
Kochoska, Sara
;
Domeij, Martin
;
Pham, Thanh Toan
...
Materials Science Forum. 1091 (2023) - p. 43-47 , 2023
Link:
https://doi.org/10.4028/p-52e297
RT Journal T1
Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_p-52e297&Exemplar=1&LAN=DE A1 Kochoska, Sara A1 Domeij, Martin A1 Pham, Thanh Toan A1 Maslougkas, Sotirios A1 Sunkari, Swapna A1 Justice, Joshua A1 Das, Hrishikesh PB Trans Tech Publications, Ltd. YR 2023 SN 1662-9752 JF Materials Science Forum VO 1091 SP 43 OP 47 LK http://dx.doi.org/https://doi.org/10.4028/p-52e297 DO https://doi.org/10.4028/p-52e297 SF ELIB - SuUB Bremen
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