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1 Ergebnisse
1
SiC Diode with Vertical Superjunction Realized Using Channe..:
Maloušek, Roman
;
Chochol, Jan
;
Das, Hrishikesh
...
Materials Science Forum. 1062 (2022) - p. 549-553 , 2022
Link:
https://doi.org/10.4028/p-ix1o7m
RT Journal T1
SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_p-ix1o7m&Exemplar=1&LAN=DE A1 Maloušek, Roman A1 Chochol, Jan A1 Das, Hrishikesh A1 Sunkari, Swapna A1 Justice, Joshua A1 Gumaelius, Krister A1 Franchi, Jimmy A1 Domeij, Martin A1 Allerstam, Fredrik A1 Wada, Ryota A1 Kuroi, Takashi PB Trans Tech Publications, Ltd. YR 2022 SN 1662-9752 JF Materials Science Forum VO 1062 SP 549 OP 553 LK http://dx.doi.org/https://doi.org/10.4028/p-ix1o7m DO https://doi.org/10.4028/p-ix1o7m SF ELIB - SuUB Bremen
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