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1 Ergebnisse
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Performance Improvement of Trench-Gate SiC MOSFETs by Local..:
Tanaka, Rina
;
Sugawara, Katsutoshi
;
Fukui, Yutaka
...
Materials Science Forum. 1004 (2020) - p. 770-775 , 2020
Link:
https://doi.org/10.4028/www.scientific.net/msf.1004.77
RT Journal T1
Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_www.scientific.net_msf.1004.770&Exemplar=1&LAN=DE A1 Tanaka, Rina A1 Sugawara, Katsutoshi A1 Fukui, Yutaka A1 Hatta, Hideyuki A1 Koketsu, Hidenori A1 Suzuki, Hiroyoshi A1 Miyata, Yusuke A1 Taguchi, Kensuke A1 Kagawa, Yasuhiro A1 Tomohisa, Shingo A1 Miura, Naruhisa PB Trans Tech Publications, Ltd. YR 2020 SN 1662-9752 JF Materials Science Forum VO 1004 SP 770 OP 775 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/msf.1004.770 DO https://doi.org/10.4028/www.scientific.net/msf.1004.770 SF ELIB - SuUB Bremen
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