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1 Ergebnisse
1
Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-Si..:
Nakao, Yukiyasu
;
Watanabe, Shoyu
;
Miura, Naruhisa
..
Materials Science Forum. 600-603 (2008) - p. 1123-1126 , 2008
Link:
https://doi.org/10.4028/www.scientific.net/msf.600-603..
RT Journal T1
Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_www.scientific.net_msf.600-603.1123&Exemplar=1&LAN=DE A1 Nakao, Yukiyasu A1 Watanabe, Shoyu A1 Miura, Naruhisa A1 Imaizumi, Masayuki A1 Oomori, Tatsuo PB Trans Tech Publications, Ltd. YR 2008 SN 1662-9752 JF Materials Science Forum VO 600-603 SP 1123 OP 1126 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/msf.600-603.1123 DO https://doi.org/10.4028/www.scientific.net/msf.600-603.1123 SF ELIB - SuUB Bremen
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