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TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical ..:
Fujihira, Keiko
;
Yoshida, Shohei
;
Miura, Naruhisa
...
Materials Science Forum. 600-603 (2008) - p. 799-802 , 2008
Link:
https://doi.org/10.4028/www.scientific.net/msf.600-603..
RT Journal T1 <Title>TDDB Measurement of Gate SiO2 on 4H-SiC Formed by Chemical Vapor Deposition</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_www.scientific.net_msf.600-603.799&Exemplar=1&LAN=DE A1 Fujihira, Keiko A1 Yoshida, Shohei A1 Miura, Naruhisa A1 Nakao, Yukiyasu A1 Imaizumi, Masayuki A1 Takami, Tetsuya A1 Oomori, Tatsuo PB Trans Tech Publications, Ltd. YR 2008 SN 1662-9752 JF Materials Science Forum VO 600-603 SP 799 OP 802 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/msf.600-603.799 DO https://doi.org/10.4028/www.scientific.net/msf.600-603.799 SF ELIB - SuUB Bremen
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