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1 Ergebnisse
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Influence of Epi-Layer Growth Pits on SiC Device Characteri..:
Kudou, Chiaki
;
Asamizu, Hirokuni
;
Tamura, Kentaro
...
Materials Science Forum. 821-823 (2015) - p. 177-180 , 2015
Link:
https://doi.org/10.4028/www.scientific.net/msf.821-823..
RT Journal T1
Influence of Epi-Layer Growth Pits on SiC Device Characteristics
UL https://suche.suub.uni-bremen.de/peid=cr-10.4028_www.scientific.net_msf.821-823.177&Exemplar=1&LAN=DE A1 Kudou, Chiaki A1 Asamizu, Hirokuni A1 Tamura, Kentaro A1 Nishio, Johji A1 Masumoto, Keiko A1 Kojima, Kazutoshi A1 Ohno, Toshiyuki PB Trans Tech Publications, Ltd. YR 2015 SN 1662-9752 JF Materials Science Forum VO 821-823 SP 177 OP 180 LK http://dx.doi.org/https://doi.org/10.4028/www.scientific.net/msf.821-823.177 DO https://doi.org/10.4028/www.scientific.net/msf.821-823.177 SF ELIB - SuUB Bremen
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