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1 Ergebnisse
1
DC and RF Characteristics of 100-nm mHEMT Devices Fabricate..:
Yoon, Hyung Sup
;
Min, Byoung-Gue
;
Chang, Sung-Jae
...
The Journal of Korean Institute of Electromagnetic Engineering and Science. 30 (2019) 4 - p. 282-285 , 2019
Link:
https://doi.org/10.5515/kjkiees.2019.30.4.282
RT Journal T1
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
UL https://suche.suub.uni-bremen.de/peid=cr-10.5515_kjkiees.2019.30.4.282&Exemplar=1&LAN=DE A1 Yoon, Hyung Sup A1 Min, Byoung-Gue A1 Chang, Sung-Jae A1 Jung, Hyun-Wook A1 Lee, Jong Min A1 Kim, Seong-Il A1 Chang, Woo-Jin A1 Kang, Dong Min A1 Lim, Jong Won A1 Kim, Wansik A1 Jung, Jooyong A1 Kim, Jongpil A1 Seo, Mihui A1 Kim, Sosu PB Korean Institute of Electromagnetic Engineering and Science YR 2019 SN 1226-3133 SN 2288-226X JF The Journal of Korean Institute of Electromagnetic Engineering and Science VO 30 IS 4 SP 282 OP 285 LK http://dx.doi.org/https://doi.org/10.5515/kjkiees.2019.30.4.282 DO https://doi.org/10.5515/kjkiees.2019.30.4.282 SF ELIB - SuUB Bremen
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