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1 Ergebnisse
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Temperature effect on Al predose and AlN nucleation affecti..:
Novák, Tomáš
;
Kostelník, Petr
;
Konečný, Martin
...
Japanese Journal of Applied Physics. 58 (2019) SC - p. SC1018 , 2019
Link:
https://doi.org/10.7567/1347-4065/ab0d00
RT Journal T1
Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices
UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_1347-4065_ab0d00&Exemplar=1&LAN=DE A1 Novák, Tomáš A1 Kostelník, Petr A1 Konečný, Martin A1 Čechal, Jan A1 Kolíbal, Miroslav A1 Šikola, Tomáš PB IOP Publishing YR 2019 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 58 IS SC SP SC1018 LK http://dx.doi.org/https://doi.org/10.7567/1347-4065/ab0d00 DO https://doi.org/10.7567/1347-4065/ab0d00 SF ELIB - SuUB Bremen
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