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1 Ergebnisse
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A review of selective area grown recess structure for insul..:
He, Liang
;
Yang, Fan
;
Yao, Yao
...
Japanese Journal of Applied Physics. 59 (2019) SA - p. SA0806 , 2019
Link:
https://doi.org/10.7567/1347-4065/ab4e5e
RT Journal T1 <Title>A review of selective area grown recess structure for insulated-gate E-mode GaN transistors</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_1347-4065_ab4e5e&Exemplar=1&LAN=DE A1 He, Liang A1 Yang, Fan A1 Yao, Yao A1 Zheng, Yue A1 Zhang, Jialin A1 Li, Liuan A1 He, Zhiyuan A1 Ni, Yiqiang A1 Gu, Xin A1 Liu, Yang PB IOP Publishing YR 2019 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 59 IS SA SP SA0806 LK http://dx.doi.org/https://doi.org/10.7567/1347-4065/ab4e5e DO https://doi.org/10.7567/1347-4065/ab4e5e SF ELIB - SuUB Bremen
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