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1 Ergebnisse
1
GaN power IC technology on p-GaN gate HEMT platform:
Wei, Jin
;
Tang, Gaofei
;
Xie, Ruiliang
.
Japanese Journal of Applied Physics. 59 (2020) SG - p. SG0801 , 2020
Link:
https://doi.org/10.7567/1347-4065/ab5b63
RT Journal T1 <Title>GaN power IC technology on p-GaN gate HEMT platform</Title> UL https://suche.suub.uni-bremen.de/peid=cr-10.7567_1347-4065_ab5b63&Exemplar=1&LAN=DE A1 Wei, Jin A1 Tang, Gaofei A1 Xie, Ruiliang A1 Chen, Kevin J. PB IOP Publishing YR 2020 SN 0021-4922 SN 1347-4065 JF Japanese Journal of Applied Physics VO 59 IS SG SP SG0801 LK http://dx.doi.org/https://doi.org/10.7567/1347-4065/ab5b63 DO https://doi.org/10.7567/1347-4065/ab5b63 SF ELIB - SuUB Bremen
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